FDFMA2N028Z: 20V Integrated N-Channel PowerTrench® MOSFET and Schottky Diode

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage.

The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Features

• MOSFET
  
• Max r_DS(on) = 68mΩ at V_GS = 4.5V, I_D = 3.7A
  
• Max r_DS(on) = 86mΩ at V_GS = 2.5V, I_D = 3.3A
  
• HBM ESD protection level > 2kV (Note 3)
  Schottky
  
• V_F < 0.37V @ 500mA
  
• Low profile - 0.8 mm maximum - in the new package MicroFET2x2 mm
  
• RoHS Compliant