FDG327N: 20V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Features

• 1.5 A, 20 V
  
• R_DS(on) = 90 mΩ@ V_GS = 4.5 V
  
• R_DS(on) = 100 mΩ @ V_GS = 2.5 V
  
• R_DS(on) = 140 mΩ @ V_GS = 1.8 V
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• High power and current handling capability.
  

Application Notes