FDG330P: P-Channel 1.8V Specified PowerTrench® MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• -2A, -12V.
  
• R_DS(ON) = 110mΩ @ V_GS = -4.5V
  
• R_DS(ON) = 150mΩ @ V_GS = -2.5V
  
• R_DS(ON) = 215mΩ @ V_GS = -1.8V
  
• Low gate charge
  
• High performance trench technology for extremely low R_DS(ON)
  
• Compact industry standard SC70-6 surface mount package
  

Application Notes