FDG410NZ: 20V Single N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.

Features

• Max r_DS(on) = 70 mΩ at V_GS = 4.5 V, I_D = 2.2 A
  
• Max r_DS(on) = 77 mΩ at V_GS = 2.5 V, I_D = 2.0 A
  
• Max r_DS(on) = 87 mΩ at V_GS = 1.8 V, I_D = 1.8 A
  
• Max r_DS(on) = 115 mΩ at V_GS = 1.5 V, I_D = 1.5 A
  
• HBM ESD protection level > 2 kV (Note 3)
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability
  
• Fast switching speed
  
• Low gate charge
  
• RoHS compliant
  

Application Notes