FDG6308P: Dual P-Channel 1.8V Specified PowerTrench® MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –0.6 A, –20 V.
  
• R_DS(ON)= 0.40Ω @ VGS = –4.5 V
  
• R_DS(ON) = 0.55Ω @ VGS = –2.5 V
  
• R_DS(ON) = 0.80Ω @ VGS = –1.8 V
  
• Low gate charge
  
• High performance trench technology for extremelylow R_DS(ON)
  
• Compact industry standard SC70-6 surface mountpackage
  

Application Notes