FDG6316P: P-Channel 1.8V Specified PowerTrench® MOSFET

This P-channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

Features

• -0.7 A, -12 V
• R_DS(ON) = 270 mΩ @ V_GS = -4.5 V
• R_DS(ON) = 360 mΩ @ V_GS = -2.5 V
• R_DS(ON) = 650 mΩ @ V_GS = -1.8 V
• Low Gate Charge
• High-Performance Trench Technology for Extremelylow R_DS(ON)
• Compact industry standard SC70-6 surface mountpackage

Application Notes