FDG6318P: Dual P-Channel, Digital FET

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Features

• -0.5A, -20V
  
• R_DS(ON) = 780 mΩ @ V_GS = -4.5V
  
• R_DS(ON) = 1200 mΩ @ V_GS = -2.5V
  
• Very low level gate drive requirements allowing directoperation in 3V circuits (V_GS(th) < 1.5V)
  
• Compact industry standard SC70-6 surface mountpackage
  

Application Notes