FDM3622: 100V N-Channel UltraFet Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Max r_DS(on) = 60mΩ at V_GS = 10V, I_D = 4.4A
  
• Max r_DS(on) = 80mΩ at V_GS = 6.0V, I_D = 3.8A
  
• Low Miller Charge
  
• Low Q_RR Body Diode
  
• Optimized efficiency at high frequencies
  
• UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744
  
• RoHS Compliant
  

Application Notes