FDMA430NZ: 30V Single N-Channel 2.5V Specified PowerTrench. ®MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

Features

• R_DS(on) = 40mΩ @ V_GS = 4.5 V, I_D = 5.0A
  
• R_DS(on) = 50mΩ@ V_GS = 2.5 V, I_D = 4.5A
  
• Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
  
• HBM ESD protection level > 2.5k V typical (Note 3)
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes