FDMB2308PZ: -20V Dual Common Drain P-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).

Features

• Max r_S1S2(on) = 36 mΩ at V_GS = -4.5 V, I_D = -5.7 A
  
• Max r_S1S2(on) = 50 mΩ at V_GS = -2.5 V, I_D = -4.6 A
  
• Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
  
• HBM ESD protection level 2.8 kV (Note 3)
  
• RoHS Compliant
  

Application Notes