FDMC5614P: -60V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).

Features

• Max r_DS(on) = 100 mΩ @ V_GS = -10 V,I_D = -5.7A
  
• Max r_DS(on) = 135 mΩ @ V_GS = -4.5 V,I_D = -4.4A
  
• Low gate charge
  
• Fast switching speed
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability
  
• RoHS Compliant
  

Application Notes