FDMC612PZ: -20V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Features

• Max r_DS(on) = 8.4 mΩ at V_GS = -4.5 V, I_D = -14 A
  
• Max r_DS(on) = 13 mΩ at V_GS = -2.5 V, I_D = -11 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• Termination is Lead-free and RoHS Compliant
  
• HBM ESD capability level > 3.6 KV typical (Note 4)
  

Application Notes