FDMC6675BZ: -30V P-Channel Power Trench® MOSFET

The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Features

• Max r_DS(on) = 14.4 mΩ at V_GS = -10 V, I_D = -9.5 A
  
• Max r_DS(on) = 27.0 mΩ at V_GS = -4.5 V, I_D = -6.9 A
  
• HBM ESD protection level of 8 kV typical(note 3)
  
• Extended V_GSS range (-25 V) for battery applications
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes