FDMC7660DC: N-Channel Dual CoolTM 33 PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

• Dual Cool™ Top Side Cooling PQFN package
  
• Max r_DS(on) = 2.2 mΩ at V_GS = 10 V, I_D = 22 A
  
• Max r_DS(on) = 3.3 mΩ at V_GS = 4.5 V, I_D = 18 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes