FDMC8360L: 40V N-Channel Shielded Gate Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
• Max r_DS(on) = 2.1 mΩ at V_GS = 10 V, I_D = 27 A
• Max r_DS(on) = 3.1 mΩ at V_GS = 4.5 V, I_D = 22 A
• High performance technology for extremely low r_DS(on)
• Termination is Lead-free
• 100% UIL Tested
• RoHS Compliant

Application Notes