FDMC86160: 100V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 14 mΩ at V_GS = 10 V, I_D = 9 A
  
• Max r_DS(on) = 23 mΩ at V_GS = 6 V, I_D = 7 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes