FDMC86240: 150V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
• Max r_DS(on) = 51 mΩ at V_GS = 10 V, I_D = 4.6 A
  
• Max r_DS(on) = 70 mΩ at V_GS = 6 V, I_D = 3.9 A
  
• Low Profile - 1 mm max in Power 33
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes