FDMC86265P: -150 P-Channel Power Trench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
  
• Max r_DS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
  
• Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
  
• This product is optimised for fast switching applications as well as load switch applications
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes