FDMC86340: 80V N-Channel Shielded Gate Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 6.5 mΩ at V_GS = 10 V, I_D = 14 A
  
• Max r_DS(on) = 8.5 mΩ at V_GS = 8 V, I_D = 12 A
  
• High performance technology for extremely low r_DS(on)
  
• Termination is Lead-free
  
• RoHS Compliant
  

Application Notes