FDMD82100L: 100 V Dual N-Channel PowerTrench® MOSFET

This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

• Max r_DS(on) = 19.5 mΩ at V_GS = 10 V, I_D = 7 A
• Max r_DS(on) = 30 mΩ at V_GS = 4.5 V, I_D = 5.7 A
• Ideal for flexible layout in primary side of bridge topology
• Termination is Lead-free and RoHS Compliant
• 100% UIL tested
• Kelvin High Side MOSFET drive pin-out capability

Application Notes