FDME1034CZT: 20V Complementary PowerTrench® MOSFET

This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.

The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Features

• Max. R_DS(on) = 66 mΩ at V_GS = 4.5 V, I_D = 3.4A
  
• Max. R_DS(on) = 86 mΩ at V_GS = 2.5 V, I_D = 2.9A
  
• Max. R_DS(on) = 113 mΩ at V_GS = 1.8 V, I_D = 2.5A
  
• Max. R_DS(on) = 160 mΩ at V_GS= 1.5 V, I_D = 2.1A
  
• Max. R_DS(on) = 142 mΩ at V_GS = -4.5 V, I_D = -2.3A
  
• Max. R_DS(on) = 213 mΩ at V_GS = -2.5 V, I_D = -1.8A
  
• Max. R_DS(on) = 331 mΩ at V_GS = -1.8 V, I_D = -1.5A
  
• Max. R_DS(on) = 530 mΩ at V_GS = -1.5 V, I_D = -1.2A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (see datasheet Note 3)
  
• RoHS Compliant
  

Application Notes