FDME410NZT: 20V N-Channel PowerTrench® MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.

Features

• Max r_DS(on) = 26 mΩ at V_GS = 4.5 V, I_D = 7 A
  
• Max r_DS(on) = 31 mΩ at V_GS = 2.5 V, I_D = 6 A
  
• Max r_DS(on) = 39 mΩ at V_GS = 1.8 V, I_D= 5 A
  
• Max r_DS(on) = 53 mΩ at V_GS = 1.5 V, I_D = 4A
  
• Low profile: 0.55 mm maximum in the new packageMicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1800V (Note3)
  
• RoHS Compliant
  

Application Notes