FDME430NT: 30V N-Channel PowerTrench® MOSFET

This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.

Features

• Max. R_DS(on) = 40 mΩ at V_GS = 4.5 V, I_D = 6 A
  
• Max. R_DS(on) = 51 mΩ at V_GS = 2.5 V, I_D = 5 A
  
• Max. R_DS(on) = 71 mΩ at V_GS = 1.8 V, I_D = 4 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes