FDME510PZT: -20V P-Channel PowerTrench® MOSFET

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications

Features

• Max r_DS(on) = 37 mΩat V_GS = -4.5 V, I_D = -5 A
  
• Max r_DS(on) = 50 mΩ at VG_S = -2.5 V, I_D = -4 A
  
• Max r_DS(on)= 65 mΩ at V_GS = -1.8 V, I_D = -3 A
  
• Max r_DS(on) = 100 mΩ at V_GS = -1.5 V, I_D = -2 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (Note3)
  
• RoHS Compliant
  

Application Notes