FDME820NZT: 20V N-Channel PowerTrench® MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.

Features

• Max r_DS(on) = 18 mΩ at V_GS = 4.5 V, I_D = 9 A
  
• Max r_DS(on) = 24 mΩ at V_GS = 2.5 V, I_D = 7.5 A
  
• Max r_DS(on) = 32 mΩ at V_GS = 1.8 V, I_D = 7 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level >2.5kV (Note3)
  
• RoHS Compliant
  

Application Notes