FDME910PZT: -20V P-Channel PowerTrench® MOSFET

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Features

• Max r_DS(on) = 24 mΩ at VGS = -4.5 V, I_D = -8 A
  
• Max r_DS(on) = 31 mΩ at VGS = -2.5 V, I_D = -7 A
  
• Max r_DS(on) = 45 mΩ at VGS = -1.8 V, I_D = -6 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• HBM ESD protection level > 2 kV typical (Note 3)
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes