FDMS3660AS: 30V Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

• Q1: N-Channel
  
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
  • Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
• Max r_DS(on) = 8 mΩ at V_GS = 10 V, I_D = 13 A
  
• Max r_DS(on) = 11 mΩ at V_GS = 4.5 V, I_D = 11 A
  
• Q2: N-Channel
  
  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
  • Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
• Max r_DS(on) = 1.8 mΩ at V_GS = 10 V, I_D = 30 A
  
• Max r_DS(on) = 2.2 mΩ at V_GS = 4.5 V, I_D = 27 A
  
• Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  
• RoHS Compliant
  

Application Notes