FDMS6673BZ: -30V P-Channel PowerTrench® MOSFET

The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Features

• Max r_DS(on) = 6.8 mΩ at V_GS = -10 V, I_D = -15.2 A
  
• Max r_DS(on) = 12.5 mΩ at V_GS = -4.5 V, I_D= -11.2 A
  
• Advanced Package and Silicon combination for low r_DS(on)
  
• HBM ESD protection level of 8 kV typical(note 3)
  
• MSL1 robust package design
  
• RoHS Compliant
  

Application Notes