FDMS8090: 100V Symmetrical Dual N-Channel MOSFET, PowerTrench® Power Stage

This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.

Features

• Max r_DS(on) = 13 mΩ at V_GS = 10 V, I_D = 10 A
  
• Max r_DS(on) = 20 mΩ at V_GS = 6 V, I_D = 8 A
  
• Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes