FDMS8558S: 25V N-Channel PowerTrench® SyncFET™

This N-Channel SyncFET™ is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Features

• Max r_DS(on) = 1.5 mΩ at V_GS = 10 V, I_D = 33 A
  
• Max r_DS(on) = 1.7 mΩ at V_GS = 4.5 V, I_D = 31 A
  
• High performance technology for extremely low r_DS(on)
  
• SyncFET™ Schottky Body Diode
  
• RoHS Compliant
  

Application Notes