FDMS86102LZ: 100V N-Channel Power Trench® MOSFET

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Features

• Max r_DS(on) = 25 mΩ at V_GS = 10 V, I_D = 7 A
• Max r_DS(on) = 37 mΩ at V_GS = 4.5 V, I_D = 5.8 A
• HBM ESD protection level > 6 KV typical (Note 4)
• 100% UIL Tested
• RoHS Compliant

Application Notes