FDMS86180: 100 V N-Channel Shielded Gate PowerTrench® MOSFET

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 3.2 mΩ at V_GS = 10 V, I_D = 67 A
  
• Max r_DS(on) = 7.9 mΩ at V_GS = 6 V, I_D = 33 A
  
• 50% Lower Qrr than Other MOSFET Suppliers
  
• Lowers Switching Noise/EMI
  
• MSL1 Robust Package Design
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes