FDMS86252L: 150V N-Channel Shielded Gate PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 56 mΩ at V_GS = 10 V, I_D = 4.4 A
  
• Max r_DS(on) = 71 mΩ at V_GS = 6 V, I_D = 3.8 A
  
• Max r_DS(on) = 75 mΩ at V_GS = 4.5 V, I_D = 3.7 A
  
• Advanced package and silicon combination for low r_DS(on) and high efficiency
  
• Next generation enhanced body diode technology, engineered for soft recovery
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes