FDMS86300DC: N-Channel Dual CoolTM 56 PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

• Dual Cool™ Top Side Cooling PQFN package
• Max r_DS(on) = 3.1 mΩ at V_GS = 10 V, I_D = 24 A
• Max r_DS(on) = 4.0 mΩ at V_GS = 8 V, I_D = 21 A
• High performance technology for extremely low r_DS(on)
• 100% UIL Tested
• RoHS Compliant

Application Notes