FDMT800120DC: N-Channel Dual CoolTM 88 PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

• Max r_DS(on) = 4.14 mΩ at V_GS = 10 V, I_D = 20 A
  
• Max r_DS(on) = 6.0 mΩ at V_GS = 6 V, I_D = 16 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• Next generation enhanced body diode technology, engineered for soft recovery
  
• Low profile 8x8mm MLP packag
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes