FDN338P: P-Channel 2.5V Specified PowerTrench ® MOSFET

This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –1.6 A, –20 V.
• R_DS(ON)= 115 mΩ @ VGS = –4.5 V
• R_DS(ON) = 155 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• SuperSOT™ -3 provides low R_DS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

Application Notes