FDN352AP: -30V Single P-Channel, Trench® MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

Features

• -1.3A, -30V
• R_DS(ON) = 180 mΩ @ V_GS = -10V
• -1.1A, -30V
• R_DS(ON) = 300 mΩ @ V_GS = -4.5V
• High performance trench technology for extremelylow R_DS(ON).
• High power version of industry Standard SOT-23package. Identical pin-out to SOT-23 with 30%higher power handling capability.

Application Notes