FDN358P: Single P-Channel, Logic Level, PowerTrench® MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• -1.5 A, -30 V
• R_DS(ON) = 125 mΩ @ V_GS = 10 V
• R_DS(ON) = 200 mΩ @ V_GS = 4.5 V.
• Low gate charge (4 nC typical)
• High performance trench technology for extremely low R_DS(ON).
• High power version of industry Standard SOT-23package. Identical pin-out to SOT-23 with 30%higher power handling capability.

Application Notes