FDN86265P: -150 P-Channel Shielded Gate PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 1.2 Ω at V_GS = -10 V, I_D = -0.8 A
  
• Max r_DS(on) = 1.4 Ω at V_GS = -6 V, I_D = -0.7 A
  
• Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
  
• This product is optimised for fast switching applications as well as load switch applications
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes