FDN86501LZ: N-Channel Shielded Gate PowerTrench® MOSFET60 V, 2.6 A, 116 mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 116 mΩ at V_GS = 10 V, I_D = 2.6 A
  
• Max r_DS(on) = 170 mΩ at V_GS = 4.5 V, I_D = 2.1 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• Fast switching speed
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes