FDS3580: N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 7.6 A, 80 V.
  
• R_{DS(ON )} = 0.029 Ω @ V_GS = 10 V
  
• R_DS(ON) = 0.033 Ω @ V_GS = 6 V.
  
• Low gate charge (34nC typical).
  
• Fast switching speed.
  
• High performance trench technology for extremely low R_DS(ON).
  
• High power and current handling capability.
  

Application Notes