FDS4935BZ: -30V Dual P-Channel PowerTrench® MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• –6.9 A, –30 V
• R_DS(ON) = 22 mΩ @ V_GS = –10 V
• R_DS(ON) = 35 m @ V_GS = – 4.5 V
• Extended V_GSS range (–25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremelylow R_DS(ON)
• High power and current handling capability

Application Notes