FDS6576: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

Features

• -11 A, -20 V.
• R_DS(ON) = 0.014 Ω @ V_GS = -4.5 V
• R_DS(ON) = 0.020 Ω @ V_GS = -2.5 V
• Extended V_GSS range (+-12V) for battery applications
• Low gate charge (44nC typical)
• Fast switching speed
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• RoHS Compliant.

Application Notes