FDS6875: Dual P-Channel 2.5V Specified PowerTrench® MOSFET

These P-Channel     2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.     These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Features

• -6 A, -20 V. R_DS(ON) = 0.030 Ω @ V_GS = -4.5 V, R_DS(ON) = 0.040 Ω @ V_GS = -2.5 V.
• Low gate charge (23nC typical).
• High performance trench technology for extremely low R_DS(ON).
• High power and current handling capability.

Application Notes