FDS86267P: P-Channel Shielded Gate PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 255 mΩ at V_GS = -10 V, I_D = -2.2 A
  
• Max r_DS(on) = 290 mΩ at V_GS = -6 V, I_D = -2 A
  
• Very Low r_DS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg
  
• This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes