FDS89161LZ: 100V Dual N-Channel Shielded Gate PowerTrench® MOSFET

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 105 mΩat V_GS = 10 V, I_D = 2.7 A
  
• Max r_DS(on) = 160 mΩat V_GS = 4.5 V, I_D = 2.1 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• CDM ESD protection level > 2KV typical (Note 4)
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes