FDS9953A: Dual -30V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features

• -2.9 A, -30 V
  
• R_DS(on) = 130 mΩ@ V_GS = -10 V
  
• R_DS(on) = 200 mΩ @ V_GS = -4.5 V
  
• Low gate charge (2.5nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• High power and current handling capability
  

Application Notes