FDT457N: N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Features

• 5 A, 30 V. R_DS(ON) = 0.06 Ω @ V_GS = 10 V
  R_DS(ON) = 0.090 Ω @ V_GS = 4.5 V
  
• High density cell design for extremely low R_DS(ON)
  
• High power and current handling capability in a widely used surface mount package
  

Application Notes