FDT86244: 150V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 128 mΩ at V_GS = 10 V, I_D = 2.8 A
• Max r_DS(on) = 178 mΩ at V_GS = 6 V, I_D = 2.4 A
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability in a widely usedsurface mount package
• Fast switching speed
• 100% UIL Tested
• RoHS Compliant

Application Notes