FDY4000CZ: 20V Complementary N & P-Channel PowerTrench® MOSFET

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench® process to optimize the RDS(ON) at VGS=2.5V and specify the RDS(ON) at VGS = 1.8V.

Features

• Max. R_DS(on) = 0.7Ω at V_GS = 4.5V, I_D = 600mA
• Max. R_DS(on) = 0.85Ω at V_GS = 2.5V, I_D = 500mA
• Max. R_DS(on) = 1.25Ω at V_GS = 1.8V, I_D =150mA
• Max. R_DS(on) = 1.2Ω at V_GS = -4.5V, I_D = -350mA
• Max. R_DS(on) = 1.6Ω at V_GS = -2.5V, I_D = -300mA
• Max. R_DS(on) = 2.7Ω at V_GS = -1.8V, I_D = -150mA
• ESD protection diode
• RoHS Compliant

Application Notes